Transport and kinetics in photoelectrolysis by semiconductor particles in suspensionCURRAN, J. S; LAMOUCHE, D.Journal of physical chemistry (1952). 1983, Vol 87, Num 26, pp 5405-5411, issn 0022-3654Article

Experimental investigation of arsenic enrichment at annealed GaAs-anodic oxide interfacesPERSON, P; LAMOUCHE, D; MARTIN, J. R et al.Thin solid films. 1986, Vol 142, Num 2, pp 251-259, issn 0040-6090Article

Electroless deposition of Au:In alloys for ohmic contacts onto Pd-activated n-GaAs substrates = Dépôt chimique d'alliages Au-In pour contacts ohmiques sur des substrats GaAs activés par du PdLAMOUCHE, D; CLECHET, P; MARTIN, J. R et al.Journal of the Electrochemical Society. 1987, Vol 134, Num 3, pp 692-697, issn 0013-4651Article

Electrochemical and photoelectrochemical behavior and selective etching of III-V semiconductors in H₂O₂ as redox systemHAROUTIOUNIAN, E; SANDINO, J.-P; CLECHET, P et al.Journal of the Electrochemical Society. 1984, Vol 131, Num 1, pp 27-34, issn 0013-4651Article

Réalisation de couches minces métalliques par dépôt autocatalytique en milieu liquide = Electroless coating in aqueous solutionMARTIN, J. R; LAMOUCHE, D; CLECHET, P et al.Le Vide, les couches minces. 1985, Vol 40, Num 227, pp 287-290, issn 0223-4335Conference Paper

Electroless deposition as a means of obtaining ohmic contacts: Au/Pd onto GaAsLAMOUCHE, D; MARTIN, J. R; CLECHET, P et al.Solid-state electronics. 1986, Vol 29, Num 6, pp 625-632, issn 0038-1101Article

Heavy ion Rutherford backscattering analysis used to study alloyed metal/GaAs interface = Analyse par rétrodiffusion Rutherford d'ions lourds pour étudier l'interface métal allié/GaAsCHEVARIER, A; CHEVARIER, N; STERN, M et al.1985, 14 p.Report

Rutherford backscattering analysis of GaAs/oxide interfacePERSON, P; CHEVARIER, A; CHEVARIER, N et al.1985, 12 col.-[2] p. de plReport